改进的用于半导体器件综合系统的遗传算法

本文对应用于器件综合系统的遗传算法GENOCOP进行了改进.将实数设计空间根据参数的工艺精度影响转换为整型空间,并加入适应性复合算子利用已经得到的点来扩展和开发准可行空间.使其保持有效搜索到可行解的特性的同时,在同等的算法设置下,提高了对可行空间的覆盖率(约2.87倍),可以帮助设计人员更有效的设计可工作的器件.     

Two CMOS LNAs Sharing the Same On-Chip Inductors and Bias Network

An area-efficient design for two 2.4 GHz CMOS LNAs is presented, by sharing the on-chip inductors and bias network. Compared with LNA1, LNA2 features a new technique to improve the linearity of CMOS LNA, achieving a much higher IIP3 with the tradeoff of voltage gain and noise figure.     

Implementation of AVS Jizhun decoder with HW/SW partitioning on a coarse-grained reconfigurable multimedia system

In this paper,a TPP(Task-based Parallelization and Pipelining)scheme is proposed to implement AVS(Audio Video coding Standard)video decoding algorithm on REMUS(REconfigurable MUltimedia System),which is a coarse-grained reconfigurable multimedia system.An AVS decoder has been implemented with the consideration of HW/SW optimized partitioning.Several parallel techniques,such as MB(Macro-Block)-based parallel and block-based parallel techniques,and several pipeline techniques,such as MB level pipeline and block level pipeline techniques are adopted by hardware implementation,for performance improvement of the AVS decoder.Also,most computation-intensive tasks in AVS video standards,such as MC(Motion Compensation),IP(Intra Prediction),IDCT(Inverse Discrete Cosine Transform),REC(REConstruct)and DF(Deblocking Filter),are performed in the two RPUs(Reconfigurable Processing Units),which are the major computing engines of REMUS.Owing to the proposed scheme,the decoder introduced here can support AVS JP(Jizhun Profile)1920×1088@39fps streams when exploiting a 200 MHz working frequency.     

A novel polishing technology for epoxy resin based on 355 nm UV laser

The electromagnetic shielding film has drawn much attention due to its wide applications in the integrated circuit package, which demands a high surface quality of epoxy resin. However, gaseous Cu will splash and adhere to epoxy resin surface when the Cu layer in PCB receives enough energy in the process of laser cutting, which has a negative effect on the quality of the shielding film. Laser polishing technology can solve this problem and it can effectively improve the quality of epoxy resin surface. The paper studies the mechanism of Cu powder spraying on the compound surface by 355 nm ultraviolet (UV) laser, including the parameters of laser polishing process and the remains of Cu content on compound surface. The results show that minimal Cu content can be realized with a scanning speed of 700 mm/s, a laser frequency of 50 kHz and the distance between laser focus and product top surface of -1.3 mm. This result is important to obtain an epoxy resin surface with high quality.     

A power management circuit with 50% efficiency and large load capacity for triboelectric nanogenerator

Recently, triboelectric nanogenerators (TENGs), as a collection technology with characteristics of high reliability, high energy density and low cost, has attracted more and more attention. However, the energy coming from TENGs needs to be stored in a storage unit effectively due to its unstable ac output. The traditional energy storage circuit has an extremely low energy storage efficiency for TENGs because of their high internal impedance. This paper presents a new power management circuit used to optimize the energy using efficiency of TENGs, and realize large load capacity. The power management circuit mainly includes rectification storage circuit and DC-DC management circuit. A rotating TENG with maximal energy output of 106 mW at 170 rpm based on PCB is used for the experimental verification. Experimental results show that the power energy transforming to the storage capacitor reach up to 53 mW and the energy using efficiency is calculated as 50%. When different loading resistances range from 0.82 to 34.5 kΩ are connected to the storage capacitor in parallel, the power energy stored in the storage capacitor is all about 52.5 mW. Getting through the circuit, the power energy coming from the TENGs can be used to drive numerous conventional electronics, such as wearable watches.     

Cost-effective large-scale synthesis of oxygen-defective ZnO photocatalyst with superior activities under UV and visible light

A cost-effective solution method was developed to produce ZnO photocatalyst in large quantity, through the conversion of ε-Zn(OH)₂ to ZnO in NaOH solutions. Experimental results indicated that the concentrated NaOH solution (4 mol L⁻¹) promoted the rapid formation of ZnO owing to the enhanced dissolution-precipitation reactions. The large-scale synthesis was also achieved with high-yield and solvent-recyclability. Structural analysis based on X-ray photoelectron spectroscopy, electron spin resonance and photoluminescence revealed that the as-prepared ZnO photocatalyst was rich in oxygen vacancies (V_O). The V_O-rich ZnO photocatalyst exhibited improved visible-light absorption, higher photocurrent responses and superior activities toward the degradation of rhodamine B under both UV (λ~254 nm) and visible-light illumination (λ>420 nm) compared to commercial ZnO and P25 TiO₂ powders, as well as good cycle stability. Based on the results of photoluminescence and active species detection, the V_O-enhanced photocatalytic activity was attributed to the generation of V_O-isolated level in the band structure. Under UV light, the V_O-level could promote charge separation by trapping the photoinduced electrons, while under visible-light, the V_O-level improved visible-light absorption and facilitated the charge generation. The presently developed synthesis may potentially benefit the large-scale production and low-cost application of ZnO photocatalyst for solar energy utilization.     

An S/H circuit with parasitics optimized for IF-sampling

An IF-sampling S/H is presented, which adopts a flip-around structure, bottom-plate sampling technique and improved input bootstrapped switches. To achieve high sampling linearity over a wide input frequency range, the floating well technique is utilized to optimize the input switches. Besides, techniques of transistor load linearization and layout improvement are proposed to further reduce and linearize the parasitic capacitance. The S/H circuit has been fabricated in 0.18-μm CMOS process as the front-end of a 14 bit, 250 MS/s pipeline ADC. For 30 MHz input, the measured SFDR/SNDR of the ADC is 94.7 dB/68. 5dB, which can remain over 84.3 dB/65.4 dB for input frequency up to 400 MHz. The ADC presents excellent dynamic performance at high input frequency, which is mainly attributed to the parasitics optimized S/H circuit.     

基于D-S效应的太赫兹源研究

基于Dyakonov-Shur 效应(D-S 效应)利用MOSFET 可构建太赫兹源。研究表明MOSFET沟道内的1mV信号在偏置电压的作用下产生波动并形成等离子波,其电学特性与谐振腔相似。当MOSFET 外接5 V 的偏置电压源时,输出频率为2.15THz、峰值为2mV 的等离子信号。通过调节偏置电压(1～20 V)可以使输出信号在0.96～4.30THz 范围内调频。此外,MOSFET 在5V 的偏置电压和5A的偏置电流的共同作用下,沟道内产生的等离子波随时间的推移以指数形式放大。受器件限制和沟道夹断效应影响,该信号源的最大输出电压为20V,电压增益最大可达到86dB,最大输出功率为200W。在器件允许范围内,偏置电压越大信号频率越高、偏置电流越大起振时间越短,且偏置电流引起的信号频偏小。     

Delamination of bonding Interface between benzocyclobutene (BCB) and silicon dioxide/silicon nitride

BCB is emerging as an attractive bonding adhesive for wafer bonding in 3-D integration. Although the bonding strength of BCB is satisfactory with the assist of adhesion promoter, it is found that BCB suffers from interface delamination in harsh chemical or thermal conditions. This paper proposes, at chemical bond level, that the mechanism of interface delamination in KOH solution is attributed to the decomposition of SiOSi bonds at the interface between substrates and AP3000 adhesion promoter as a result of hydrolysis. Silicon dioxide and silicon nitride films with various densities of SiH and SiN bonds are prepared, and the bond densities are measured using infrared spectroscopy. The corresponding interface delamination rates of these films and BCB in KOH solution are measured, and the relations between the bond densities and the delamination rates are obtained for silicon dioxide and silicon nitride. It shows that the delamination rates decrease with the increase in the densities of SiOSi. These results demonstrate that the decomposition of SiOSi in KOH is the main reason for BCB delamination, and increase in the density of SiOSi improves the bonding strength.     

一种新的自旋量子效应——电流感应磁化翻转

电流感应的磁化翻转效应是近年来继巨磁阻效应(GMR)和隧道磁阻效应(TMR)之后提出的一种nm尺度下新的自旋相关效应,在无外加磁场的情况下,垂直于铁磁层平面的自旋极化电流就能引起铁磁层的磁化翻转。该效应有望被用于制作新型的电流操纵磁存储器件。报道了该效应的理论和实验的研究进展。